AZ LNR-003 diluted - 1:0.3 with PGMEA - 1.00 l
Merck Performance Materials GmbH
The AZ® LNR-003 diluted is a negative resist for lift off applications with strong undercut.
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Product number:
1LNR00313P01
Manufacturer:
Merck Performance Materials GmbH
Product information "AZ LNR-003 diluted - 1:0.3 with PGMEA - 1.00 l"
AZ® LNR-003 diluted – 1:0.3 with PGMEA
Negative Resist for Lift-off Applications
General Information
The i-line sensitive negative resist AZ® LNR 003 with a resist film thickness of approx. 1 - 2 µm is a resist optimized primarily for lift-off applications due to its adjustable strong undercut.
Product Properties
AZ® LNR 003 covers a resist film thickness range of - depending on the spin speed - approx. 1 - 2 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The developed resist structures are, as desired for lift-off applications, pronounced negative even with low resist film thicknesses, since the strong absorption means that the upper resist areas receive a much higher dose during exposure and thus cross-link more strongly than the resist areas close to the substrate. The undercut can be adjusted over a relatively large range using the exposure dose (lower dose = stronger undercut) and the duration of overdevelopment. This also enables critical lift-off applications (for example sputtered or thicker layers) to be implemented. However, it should be noted that too strong an undercut can lead to narrow resist structures lifting off the substrate during development. If even thinner resist layers are required, the AZ® LNR 003 can be diluted with PGMEA = AZ® EBR Solvent, whereby it becomes increasingly difficult to achieve an undercut with based resist layers. For thicker resist layers, the higher viscosity version of the AZ® LNR 003 is recommended or for > 3 µm resist film thickness the AZ® nLOF 2000 series.
Developers
TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which has an additive that promotes residue-free development, especially with cross-linking resists) are recommended for developing the AZ® LNR 003. KOH- or NaOH-based developers such as AZ® 400K or AZ® 351B are generally not suitable for the AZ® LNR 003. If TMAH-based developers cannot be used, an attempt with a normal or more aggressive KOH-based developer can be considered.
Removers
If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 920 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Bead Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solventis an option. PGMEA is the solvent for AZ® LNR 003 anyway and is also recommended for edge removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® LNR-003 Photoresist english
Safety Data Sheet AZ® LNR-003 Photoresist german
TDS:
Technical Data Sheet AZ® LNR-003 english
Information AZ® LNR-003 english
Application Notes:
Further Information about Photoresist Processing
Related products
AZ LNR-003 - 3.785 l
100LNR003
Bottle size:
3.785 l
AZ® LNR-003
Negative Resist for Lift-off Applications
General Information
The i-line sensitive negative resist AZ® LNR 003 with a resist film thickness of approx. 2 - 4 µm is a resist optimized primarily for lift-off applications due to its adjustable strong undercut.
Product Properties
AZ® LNR 003 covers a resist film thickness range of - depending on the spin speed - approx. 2 - 4 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The developed resist structures are, as desired for lift-off applications, pronounced negative even with low resist film thicknesses, since the strong absorption means that the upper resist areas receive a much higher dose during exposure and thus cross-link more strongly than the resist areas close to the substrate. The undercut can be adjusted over a relatively large range using the exposure dose (lower dose = stronger undercut) and the duration of overdevelopment. This also enables critical lift-off applications (for example sputtered or thicker layers) to be implemented. However, it should be noted that too strong an undercut can lead to narrow resist structures lifting off the substrate during development. If even thinner resist layers are required, the LNR 003 can be diluted with PGMEA = AZ® EBR Solvent, for which we offer an appropriately diluted version (AZ® LNR-003 diluted). For thicker layers > 3 µm resist thickness, the AZ® nLOF 2000 series is recommended.
Developers
AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which has an additive that promotes residue-free development, especially with cross-linking resists) are recommended for developing the AZ® LNR 003. KOH- or NaOH-based developers such as AZ® 400K or AZ® 351B are generally not suitable for the AZ® LNR 003. If TMAH-based developers cannot be used, an attempt with a normal or more aggressive KOH-based developer can be considered.
Removers
If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 920 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Bead Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solventis an option. PGMEA is the solvent for AZ® LNR 003 anyway and is also recommended for edge removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® LNR-003 Photoresist english
Safety Data Sheet AZ® LNR-003 Photoresist german
TDS:
Technical Data Sheet AZ® LNR-003 english
Information AZ® LNR-003 english
Application Notes:
Further Information about Photoresist Processing
AZ 5209-E Photoresist - 3.785 l
1A005209
AZ® 5209E
Image Reversal Resist for High Resolution
General Information
This special photoresist is the thinner version of the AZ® 5200E series intended for lift-off techniques which call for a negative side wall profile. The reversal bake moderately cross-links the exposed resist making the developed structures thermally stable up to approx. 130°C. Due to the comparably low resist film thickness of ~ 0.9 µm, the process parameter window for an undercut is rather small thus requiring some optimizations in the exposure dose and the reversal bake parameters. Therefore, if the resolution required is not in the sub-µm range, a thicker resist such as the AZ® LNR-003 (next section), or the AZ® nLOF 2000 negative resists might be a good alternative.
Product Properties
Very high resolution as a positive resist as well as a negative resist
Possible negative sidewall profile in image reversal mode
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
h- and i-line sensitive (approx. 320 - 405 nm)
Resist film thickness range approx. 0.7 - 1.2 µm
High thermal stability especially in image reversal mode
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 dilution recommended) is a suited developer.
The KOH-based AZ® 400K (also 1:4 - 1:5 diluted) is also possible.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 726 MIF or AZ® 326 MIF developer, normally undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer :1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet AZ® 5209-E Photoresist english
Sicherheitsdatenblatt AZ® 5209-E Fotolack german
TDS:
Technical Data Sheet AZ® 5209-E Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 5214-E Photoresist - 3.785 l
1005214EJP
Bottle size:
3.785 l
AZ® 5214E
Image Reversal Resist for High Resolution
General Information
This special photoresist is intended for lift-off techniques which call for a negative side wall profile. The reversal bake moderately cross-links the exposed resist making the developed structures thermally stable up to approx. 130°C. Due to the comparably low resist film thickness of ~1.4 µm, the process parameter window for an undercut is rather small thus requiring some optimizations in the exposure dose and the reversal bake parameters. Therefore, if the resolution required is not in the sub-µm range, a thicker resist such as the AZ® LNR-003 (next section), or the AZ® nLOF 2000 negative resists might be a good alternative.
The undercut of AZ® 5214E attained under optimized process parameters.
Product Properties
Very high resolution as a positive resist as well as a negative resist
Possible negative sidewall profile in image reversal mode
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
h- and i-line sensitive (approx. 320 - 405 nm)
Resist film thickness range approx. 1.0 – 1.8 µm
High thermal stability especially in image reversal mode
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 dilution recommended) is a suited developer.
The KOH-based AZ® 400K (also 1:4 - 1:5 diluted) is also possible.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 726 MIF or AZ® 326 MIF developer, normally undiluted, or - for maximum resolution - moderately 3:1 - 2:1 ( 3 parts Developer :1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet AZ® 5214E Photoresist english
Sicherheitsdatenblatt AZ® 5214E Fotolack german
TDS:
Technical Data Sheet AZ® 5214E Photoresist english
Application Notes:
Further Information about Photoresist Processing
TI 35 E - 5.00 l
1035005
Bottle size:
5.00 l
TI 35E Photoresist
Image Reversal Resist
General Information
TI 35E for 2.5 - 5 µm Resist Film Thickness (g -, H - and I-line)
TI 35E is an image reversal resist with optimised adhesion, however compared with TI 35ESX, a lower sof¬tening temperature. As a result it is more suited for wet-chemical etching processes.
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 2.5 - 5 µm
Developers
If metal ion containing developers can be used, the KOH-based AZ® 400K in a 1:4 dilution (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet TI 35E Photoresist english
Sicherheitsdatenblatt TI 35E Fotolack german
TDS:
Technical Data Sheet TI 35E Photoresist english
Application Notes:
Further Information about Photoresist Processing
TI 35 ESX - 5.00 l
1035005X
Bottle size:
5.00 l
TI 35ESX Photoresist
Image Reversal Resist
General Information
The TI 35 ESX resist is specially designed for the application in the so called “image reversal technology” for:
Subsequent lift-off of deposited layers with a thickness up to 4 µm
Plasma etching
The viscosity of the resist leads to a thickness range depending on the spin speed from 2.5 - 3.5 µm. The typical aspect ratio of the structured features achievable is in the range of 1.0 - 2.0. This technical data sheet intends to give you a guide-line for process parameters for various applications. However, the optimum values for e.g. spin profile, exposure dose or development depend on the individual equipment and need to be adjusted on each individual demand.
Due to the required second exposure, the process sequence will be easier with a negative resist like **AZ® nLof 20xx series and could be a good alternative.
Product Properties
Possible negative sidewall profile in image reversal mode
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- und i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 2.5 – 3.5 µm
Developers
We recommend the TMAH-based developers AZ® 726 MIF, AZ® 2026 MIF or AZ® 400K 1:4 based on buffered KOH.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet TI 35ESX Photoresist english
Sicherheitsdatenblatt TI 35ESX Fotolack german
TDS:
Technical Data Sheet TI 35ESX Photoresist english
Application Notes:
Further Information about Photoresist Processing
TI Spray - 5.00 l
1030050n
Bottle size:
5.00 l
TI Spray
Image Reversal Resist
General Information
TI Spray for 1 - 20 µm Resist Film Thickness (g -, H - and I-line)
TI Spray is a ready-to-use spray resist whose low content of low-boiling solvent allows a smooth resist surface at the expense of a somewhat smaller edge coverage by slow drying of the resist film formed (If edge coverage is of highest importance, the use of AZ® 4999 should be considered as a good alternative).
It can be used in positive or in image-reversal (negative) mode. It can be used for wet chemical etching processes as well as for lift off applications.
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1 - 20 µm
Very smooth resist layers after spray coating on the price of lower edge coverage potential
Developers
If metal ion containing developers can be used, the KOH-based AZ® 400K in a 1:4 dilution (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet TI Spray english
Sicherheitsdatenblatt TI Spray german
TDS:
Technical Data Sheet TI Spray english
Application Notes:
Further Information about Photoresist Processing
TI XLiftX - 5.00 l
10800X5
Bottle size:
5.00 l
TI xLift-X
Image Reversal Resist
General Information
TI XLift-X allows resist thicknesses up to over 10 µm. However, as the resist thickness increases, the process becomes ever more time-consuming for rehydration or for the out gassing of the nitrogen formed during exposure. Thus a reasonable alternative for most applications would be the AZ® nLOF 2070 negative resist.
10.5 µm thick metal finger via lift-off with TI xLift-X
Product Properties
Possible negative sidewall profile in image reversal mode
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- und i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 4 – 25 µm
Developers
We recommend the KOH-based AZ® 400K 1:3 - 1:4 diluted.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet TI xLift-X english
Sicherheitsdatenblatt TI xLift-X german
TDS:
Technical Data Sheet TI xLift-X english
Application Notes:
Further Information about Photoresist Processing
Developer
AZ 351 B Developer - 5.00 l
1000351
AZ® 351B Developer
Inorganic, Metal Ion Containing Developer
General Information
AZ® 351B Developer is a boric acid buffered, NaOH-based developer for non-chemically amplified positive resists.
Product Features
AZ® 351B Developer is a NaOH-based developer, particularly suitable for developing non-chemically amplified positive resists with layer thicknesses of a few µm. AZ® 351B Developer comes as a concentrate and is usually diluted 1: 4 with water. To increase selectivity, a 1: 5 - 1:6 dilution can also be applied, but this significantly reduces the development rate and is therefore not a reasonable option for thicker resist films. If the requirements for steep resist sidewalls are low, the AZ® 351B can also be set stronger (1:3.5 - 1:3) if higher development rates are required , but this leads to a disproportionate increase in dark erosion. AZ® 351B is less suitable for negative resists or chemically amplified positive resists; TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF are recommended here. AZ® 351B attacks aluminum with an etching rate of - depending on the concentration of the developer dilution - several 10 nm/min to over 100 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer can be an alternative.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 351B Developer english
Safety Data Sheet AZ® 351B Entwickler german
TDS:
Technical Data Sheet AZ® 351B Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 400 K Developer - 5.00 l
1000400
AZ® 400K Developer
Inorganic, Metal Ion Containing Developer
General Information
AZ® 400K Developer is a boric acid buffered, KOH-based developer for non-chemically amplified positive resists.
Product Features
As a KOH-based developer, AZ® 400K is particularly suitable for developing thicker, non-chemically amplified positive resists, but can also be used for thinner resist layers if the resolution requirements are not too high. AZ® 400K comes as a concentrate and is usually diluted 1: 4 with water. To increase selectivity, a 1: 5 - 1:6 dilution can also be selected, but this significantly reduces the development rate and is therefore not a reasonable option for thick resist processing. For very thick resist films and/or very steep resist sidewalls are not required, AZ® 400K can also be used at a stronger dilution (1:3.5 - 1:3), which increases the development rate but significantly increases the dark removal. AZ® 400K is less suitable for negative resists or chemically amplified positive resists; TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF are recommended here. AZ® 400K attacks aluminum with an etching rate of - depending on the concentration of the developer dilution - several 10 nm/min to over 100 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer can be an alternative.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 400K Developer english
Safety Data Sheet AZ® 400K Developer german
TDS:
Technical Data Sheet AZ® 400K Developer english
Information AZ® 400K Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 400 K Dev 1:4 - 5.00 l
1004145
AZ® 400K Developer 1:4
Inorganic, Metal Ion Containing Developer
General Information
AZ® 400K Developer 1:4 is a boric acid buffered, KOH-based ready-to-use developer for non-chemically amplified positive resists.
Product Features
AZ® 400K Developer 1:4 is an AZ® 400K that has already been pre-diluted for use. As a KOH-based developer, this developer is particularly suitable for developing thicker, non-chemically amplified positive resists, but can also be used for thinner resist layers if the resolution requirements are not too high. AZ® 400K Developer is less suitable for negative resists or chemically amplified positive resists; TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF are recommended here. AZ® 400K Developer attacks aluminum with an etching rate of - depending on the concentration of the developer dilution - several 10 nm/min to over 100 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer can be an alternative.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 400K 1:4 Developer english
Safety Data Sheet AZ® 400K 1:4 Developer german
TDS:
Technical Data Sheet AZ® 400K 1:4 Developer english
Information AZ® 400K 1:4 Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 726 MIF Developer - 5.00 l
1000726
AZ® 726 MIF Developer
Metal Ion-free Developers
General Information
AZ® 726 MIF is a TMAH-based developer for dip or puddle development, compatible with all AZ® photoresists from our portfolio.
Product Features
The ready-to-use AZ® 726 MIF Developer is an aqueous 2.38% TMAH solution with a surfactant for even substrate wetting for puddle development, but is also suitable for immersion development. For spray development, the surfactant-free AZ® 326 MIF would be the better choice to avoid foaming. TMAH-based developers are always used when metal ion-free development is required. In addition, TMAH-based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For standard (non chemically amplified), DNQ-based positive resists without the requirement for metal ion-free development, a KOH or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For cross-linking negative resists, the AZ® 2026 MIF can prove to be advantageous, as it promotes residue-free development with these resists thanks to certain additives. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute the AZ® 726 MIF Developer with water (AZ® 726 MIF: water = 2:1 to a maximum of 1:1). AZ® 726 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer is an alternative, but this is based on sodium compounds and is therefore not free of metal ions.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 726 MIF Developer english
Safety Data Sheet AZ® 726 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 726 MIF Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 326 MIF Developer - 5.00 l
1000326
AZ® 326 MIF Developer
Metal Ion-free Developer
General Information
AZ® 326 MIF is a TMAH-based developer for dip or spray development, compatible with all AZ®</sup photoresists from our portfolio.
Product Features
The ready-to-use AZ® 326 MIF developer is an aqueous 2.38% TMAH solution without any additives. This makes it suitable for dip or spray development, but less for puddle development, for which the AZ® 726 MIF developer is the better choice due to its special surfactant for substrate wetting. TMAH-based developers are always used when development must be carried out metal ion free. In addition, TMAH- based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute the AZ® 326 MIF with water (AZ® 326 MIF : water = 2:1 to a maximum of 1:1). AZ® 326 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer is an alternative, which, however, is based on sodium compounds and is therefore not metal ion-free.
For standard (non chemically amplified), DNQ-based positive resists without the requirement of metal ion-free development, a KOH- or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For cross-linking negative resists, AZ® 2026 MIF can prove advantageous, which promotes residue-free development with these resists through certain additives.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 326 MIF Developer english
Safety Data Sheet AZ® 326 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 326 MIF Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
Remover
AZ 100 Remover - 5.00 l
1000100
AZ® 100 Remover
Universal Photoresist Stripper
General Information
AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine.
Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water.
AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists.
Product Properties
Density (at 25°C): 0.955 kg/l
Color (Alpha): max. 20
Flashpoint (AP): 72°C
Normality (potentiometric): 3.1 mol/l
Boiling range: 159-194°C
Further Information
MSDS:
Safety Data Sheet AZ® 100 Remover english
Sicherheitsdatenblatt AZ® 100 Remover german
TDS:
Technical Data Sheet AZ® 100 Remover english
Application Notes:
Photoresist removal english
Fotolack entfernen german
DMSO - 2.50 l - ULSI
MDMU1025
DMSO
Dimethyl Sulfoxide
General Information
Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO.
NOTE:
The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Product Properties
Density: 1.1 g/cm3
Melting point: 18°C
Boiling point: 189°C
Flash point: 87°C
Vapour pressure @ 20°C: 0.56 hPa
DMSO Molecule
Further Information
MSDS:
Safety Data Sheet DMSO (ULSI) english
Sicherheitsdatenblatt DMSO (ULSI) german
Specs:
Specs DMSO (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip P1316 - 5.00 l - MOS
TP1316M5
TechniStrip® P1316
High Performance Remover
General Information
TechniStrip® P1316 is a remover with very strong stripping power for Novolak-based resists (including all AZ® positive resists), epoxy-based coatings, polyimides and dry films. At a typical application temperatures around 75°C TechniStrip® P1316 may dissolve cross-linked resists without residue also, e.g. through dry etching or ion implantation. The remover can also be used in spraying processes.
Product Properties
Flashpoint: 93°C
Viscosity (20°C): < 2 cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.03 g/cm3
Compatibility
Metals: attacked Al, Cu, Au
Metals: no attack on Ta, Ni, Ti, TiN
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Some Applications
TechniStrip® P1316 is a powerful NMP-free remover for:
Novolak-based positive resists such as all positive AZ® resists
Epoxy-based resists
Polyimides, bonding glues
Dry films
Further Information
MSDS:
Safety Data Sheet TechniStrip P1316 (MOS) english
Sicherheitsdatenblatt TechniStrip P1316 (MOS) german
TDS:
Technical Data Sheet TechniStrip P1316 (MOS) english
Specs:
Specs TechniStrip P1316 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
AZ Remover 920 - 5.00 l
1000920
AZ® Remover 920
Organic Solvent Based Remover
General Information
AZ® Remover 920 is designed for fast delamination and dissolution of photoresist patterns while maintaining broad compatibility with device substrates and metal films.
Merck’s proprietary solvent and additive blend is environmentally friendly and fully compliant with the European Union’s REACH regulatory code. Compatible with most AZ® positive resists (complete dissolution) and most AZ® negative resists (dissolution or delamination depending on degree of cross-linking).
Product Properties
Flashpoint: 84.4°C
Viscosity (20°C): 1.84 cSt
Boiling point: 188°C
Density (at 25°C): 1.084 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ti, W, TiW, TiN, Sn, Ni
Substrates: Si, SiO2, GaAs
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Fast delamination of photoresist patterns
Broad compatibility
Environmentally friendly
Some Applications
Bulk Photoresist Removal
Metal Lift-off Lithography
Cu Pillar Metallization Cleans
RDL Metallization Cleans
Delamination of Heavily Cured Photoresist Patterns & Organic Residues
Further Information
MSDS:
Safety Data Sheet AZ® Remover 920 english
Sicherheitsdatenblatt AZ® Remover 920 german
TDS:
Technical Data Sheet AZ® Remover 920 english
Application Notes:
Photoresist Removal english
Entfernen von Fotolack german