AZ ECI 3007 Photoresist - 3.785 l
Merck Performance Materials GmbH
AZ® ECI 3007 is a DNQ based thin positive resist with very high resolution potential for wet and dry etching applications.
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Product number:
1A003007
Manufacturer:
Merck Performance Materials GmbH
Product information "AZ ECI 3007 Photoresist - 3.785 l"
AZ® ECI 3007
High Resolution with Broad Process Window
General Information
The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists. AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm). The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers.
Product Properties
- Very high resolution
- Optimized resist adhesion to all common substrate materials
- Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation
- Broad process parameter window for stable and reproducible litho-processes
- Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
- g-, h- and i-line sensitive (approx. 320 - 440 nm)
- Resist film thickness range approx. 0.5 - 1 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® ECI 3007 Photoresist english
Sicherheitsdatenblatt AZ® ECI 3007 Fotolack german
TDS:
Technical Data Sheet AZ® ECI 3000 Series english
Application Notes:
Further Information about Photoresist Processing
Related products
AZ 1505 Photoresist - 3.785 l
1A001505
Bottle size:
3.785 l
AZ® 1505
Positive Thin Resists for Wet Etching
General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The high resolution and adhesion of the AZ® 1505 make this resist a commonly used resist mask for Cr etching in photo mask production.
At 4000 rpm, a coating thickness of approx. 500 nm can be attained. A coating thickness of approx. 400 - 800 nm can also be achieved by varying the spin speed.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 0.4 – 0.8 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1505 Photoresist english
Sicherheitsdatenblatt AZ® 1505 Fotolack german
TDS:
Technical Data Sheet AZ® 1505 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 1512 HS Photoresist - 3.785 l
1A001512
Bottle size:
3.785 l
AZ® 1512 HS
Positive Thin Resists for Wet Etching
General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm.
The very high photo active compound concentration of the AZ® 1512 HS maximises the resist contrast (very high development rate, minimized dark erosion).
At 4000 rpm, a coating thickness of approx. 1.2 µm can be attained. A coating thickness of approx. 1.0 – 1.8 µm can also be achieved by varying the spin speed.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1.0 – 1.8 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF** developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1512 HS Photoresist english
Sicherheitsdatenblatt AZ® 1512 HS Fotolack german
TDS:
Technical Data Sheet AZ® 1512 HS Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 1514 H Photoresist - 3.785 l
1A001514
Bottle size:
3.785 l
AZ® 1514H
Positive Thin Resists for Wet Etching
General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm.
A special resin further improves the resist adhesion on most common (metallic) substrates. Resist film thickness at 4000 rpm approx. 1.4 µm, via variations of the spin speed approx. 1.1 - 2 µm attainable.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1.1 µm – 2.0 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1514 H Photoresist english
Sicherheitsdatenblatt AZ® 1514 H Fotolack german
TDS:
Technical Data Sheet AZ® 1514 H Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 1518 Photoresist - 3.785 l
1A001518
Bottle size:
3.785 l
AZ® 1518
Positive Thin Resists for Wet Etching
General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm.
The elevated resist film thickness of the AZ® 1518 improve the stability of the resist mask for wet etching processes.
At 4000 rpm, a coating thickness of approx. 1.8 µm can be attained. A coating thickness of approx. 1.5 – 3.0 µm can also be achieved by varying the spin speed.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1.5 µm – 3.0 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1518 Photoresist english
Sicherheitsdatenblatt AZ® 1518 Fotolack german
TDS:
Technical Data Sheet AZ® 1518 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ ECI 3012 Photoresist - 3.785 l
1A003012
Bottle size:
3.785 l
AZ® ECI 3012
High Resolution with Broad Process Window
General Information
The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists.
AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm).
The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers.
*450 nm resist lines with the AZ® ECI 3012 at approx. 1.2 µm film thickness.
Product Properties
Very high resolution
Optimized resist adhesion to all common substrate materials
Steep resist sidewalls and high aspect ratio for dry etching or ion implantation
-Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 0.9 – 1.5 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® ECI 3012 Photoresist english
Sicherheitsdatenblatt AZ® ECI 3012 Fotolack german
TDS:
Technical Data Sheet AZ® ECI 3012 Photoresist english
Technical Data Sheet AZ® ECI 3000 Series english
Application Notes:
Further Information about Photoresist Processing
AZ ECI 3027 Photoresist - 3.785 l
1A003027
Bottle size:
3.785 l
AZ® ECI 3027
High Resolution with Broad Process Window
General Information
The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists.
AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm).
The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers.
900 nm resist lines with the AZ® ECI 3027 at approx. 2.7 µm resist film thickness.
Product Properties
Very high resolution
Optimized resist adhesion to all common substrate materials
Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 2 – 3.5 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® ECI 3027 Photoresist english
Sicherheitsdatenblatt AZ® ECI 3027 Fotolack german
TDS:
Technical Data Sheet AZ® ECI 3000 Series english
Application Notes:
Further Information about Photoresist Processing
AZ MIR 701 Photoresist (11 CPS) - 3.785 l
1007011
AZ® MIR 701 (11CPS)
High Resolution and Temperature Stability
General Information
AZ® 701 MIR Series for 0.7 – 3.0 µm Resist Film Thickness (g-, h- and I-line)
As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ® 701 MIR (11CPS) is optimised especially for dry chemical etching of fine to very fine structures. This resist can be easily further diluted in order to attain even better resolutions, for example in applications of laser-interference lithography. We sell this resist in two different viscosities of 11CPS, 14CPS and 29CPS. It can be used with common NaOH, KOH or TMAH based developers.
300 nm resist lines attained with the AZ® 701 MIR
1.2µm structure after 130°C hardbake
Product Properties
Very high resolution, for 0.5 µm and 0.35 µm technology nodes
High thermal stability
Excellent process latitude for both line/space and contact whole applications
Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range AZ® MIR 701 (11CPS): approx. 0.6 – 1.0 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for resist film thicknesses and resolutions < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer.
The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution and very thin resist layers - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 or AZ® Remover 920.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® MIR 701 (11CPS) Photoresist english
Sicherheitsdatenblatt AZ® MIR 701 (11CPS) Fotolack german
TDS:
Technical Data Sheet AZ® MIR 701 Series english
Application Notes:
Further Information about Photoresist Processing
AZ MIR 701 Photoresist (29 CPS) - 3.785 l
10070129
Bottle size:
3.785 l
AZ® MIR 701 (29CPS)
High Resolution and Temperature Stability
General Information
AZ® 701 MIR Series for 0.7 – 3.0 µm Resist Film Thickness (g-, h- and I-line)
As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ® 701 MIR (29CPS) is optimised especially for dry chemical etching of fine to very fine structures. This resist can be easily further diluted in order to attain even better resolutions, for example in applications of laser-interference lithography. We sell this resist in two different viscosities of 11CPS, 14CPS and 29CPS. It can be used with common NaOH, KOH or TMAH based developers.
300 nm resist lines attained with the AZ® 701 MIR
1.2µm structure after 130°C hardbake
Product Properties
Very high resolution, for 0.5 µm and 0.35 µm technology nodes
High thermal stability
Excellent process latitude for both line/space and contact whole applications
Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range AZ® MIR 701 (29CPS): approx. 1.2 – 2.5 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for resist film thicknesses and resolutions < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer.
The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution and very thin resist layers - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 or AZ® Remover 920.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® MIR 701 (29CPS) Photoresist english
Sicherheitsdatenblatt AZ® MIR 701 (29CPS) Fotolack german
TDS:
Technical Data Sheet AZ® MIR 701 (29CPS) english
Technical Data Sheet AZ® MIR 701 Series english
Application Notes:
Further Information about Photoresist Processing
AZ TFP-650F5 (15CP) Photoresist - 3.785 l
34000511
AZ® TFP 650
Flat Panel Display Photoresist
General Information
The AZ® TFP 650 F5 resist is suitable for spin coat and extrusion coat applications excellent adhesion requirements and/or harsh etching conditions. It is designed to meet the requirements of the flat panel display industry. They are specifically optimized for a variety of applications including spin coat, extrusion coat and roller coat. These production-proven photoresists can be used with a variety of developers and removers, and they are formulated to be compatible with the underlying layers.
Product Properties
Ultra high photospeed
Low dark film loss
Optimized resist adhesion
Easy removal after hardbake
High resistance to harsh etchants
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1 – 2 µm
Developers
We recommend the TMAH-based AZ® 726 MIF or AZ® 326 MIF (this one contains surfactants).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free such as AZ® 920 Remover or TechniStrip P1316 as remover.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® TFP 650 Photoresist english
Sicherheitsdatenblatt AZ® TFP 650 Fotolack german
TDS:
Technical Data Sheet AZ® TFP 650 english
Information AZ® TFP 650 english
Application Notes:
Further Information about Photoresist Processing
Developer
AZ 351 B Developer - 5.00 l
1000351
AZ® 351B Developer
Inorganic Developers
General Information
AZ® 351B Developer is a boric acid buffered, NaOH-based developer for non-chemically amplified positive resists.
Product Features
AZ® 351B Developer is a NaOH-based developer, particularly suitable for developing non-chemically amplified positive resists with layer thicknesses of a few µm. AZ® 351B Developer comes as a concentrate and is usually diluted 1: 4 with water. To increase selectivity, a 1: 5 - 1:6 dilution can also be applied, but this significantly reduces the development rate and is therefore not a reasonable option for thicker resist films. If the requirements for steep resist sidewalls are low, the AZ® 351B can also be set stronger (1:3.5 - 1:3) if higher development rates are required , but this leads to a disproportionate increase in dark erosion. AZ® 351B is less suitable for negative resists or chemically amplified positive resists; TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF are recommended here. AZ® 351B attacks aluminum with an etching rate of - depending on the concentration of the developer dilution - several 10 nm/min to over 100 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer can be an alternative.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 351B Developer english
Safety Data Sheet AZ® 351B Entwickler german
TDS:
Technical Data Sheet AZ® 351B Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 400 K Developer - 5.00 l
1000400
AZ® 400K Developer
Inorganic Developers
General Information
AZ® 400K MIC is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT. In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request.
Further Information
MSDS:
Safety Data Sheet AZ® 400K Developer english
Sicherheitsdatenblatt AZ® 400K Entwickler german
TDS:
Technical Data Sheet AZ® 400K Developer english
Information AZ® 400K Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 400 K Dev 1:4 - 5.00 l
1004145
AZ® 400K Developer 1:4
Inorganic Developers
General Information
In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request.
AZ® 400K MIC Developer is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT.
Further Information
MSDS:
Safety Data Sheet AZ® 400K 1:4 Developer english
Sicherheitsdatenblatt AZ® 400K 1:4 Entwickler german
TDS:
Technical Data Sheet AZ® 400K 1:4 Developer english
Information AZ® 400K 1:4 Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 326 MIF Developer - 5.00 l
1000326
AZ® 326 MIF Developer
Metal Ion-free Developer
General Information
AZ® 326 MIF is a TMAH-based developer for dip or spray development, compatible with all AZ®</sup photoresists from our portfolio.
Product Features
The ready-to-use AZ® 326 MIF developer is an aqueous 2.38% TMAH solution without any additives. This makes it suitable for dip or spray development, but less for puddle development, for which the AZ® 726 MIF developer is the better choice due to its special surfactant for substrate wetting. TMAH-based developers are always used when development must be carried out metal ion free. In addition, TMAH- based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute the AZ® 326 MIF with water (AZ® 326 MIF : water = 2:1 to a maximum of 1:1). AZ® 326 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer is an alternative, which, however, is based on sodium compounds and is therefore not metal ion-free.
For standard (non chemically amplified), DNQ-based positive resists without the requirement of metal ion-free development, a KOH- or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For cross-linking negative resists, AZ® 2026 MIF can prove advantageous, which promotes residue-free development with these resists through certain additives.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 326 MIF Developer english
Safety Data Sheet AZ® 326 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 326 MIF Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 726 MIF Developer - 5.00 l
1000726
AZ® 726 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 726MIF Developer english
Sicherheitsdatenblatt AZ® 726MIF Entwickler german
TDS:
Technical Data Sheet AZ® 726MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
Remover
AZ 100 Remover - 5.00 l
1000100
AZ® 100 Remover
Universal Photoresist Stripper
General Information
AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine.
Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water.
AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists.
Product Properties
Density (at 25°C): 0.955 kg/l
Color (Alpha): max. 20
Flashpoint (AP): 72°C
Normality (potentiometric): 3.1 mol/l
Boiling range: 159-194°C
Further Information
MSDS:
Safety Data Sheet AZ® 100 Remover english
Sicherheitsdatenblatt AZ® 100 Remover german
TDS:
Technical Data Sheet AZ® 100 Remover english
Application Notes:
Photoresist removal english
Fotolack entfernen german
DMSO - 2.50 l - ULSI
MDMU1025
DMSO
Dimethyl Sulfoxide
General Information
Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO.
NOTE:
The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Product Properties
Density: 1.1 g/cm3
Melting point: 18°C
Boiling point: 189°C
Flash point: 87°C
Vapour pressure @ 20°C: 0.56 hPa
DMSO Molecule
Further Information
MSDS:
Safety Data Sheet DMSO (ULSI) english
Sicherheitsdatenblatt DMSO (ULSI) german
Specs:
Specs DMSO (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip P1316 - 5.00 l - MOS
TP1316M5
TechniStrip® P1316
High Performance Remover
General Information
TechniStrip® P1316 is a remover with very strong stripping power for Novolak-based resists (including all AZ® positive resists), epoxy-based coatings, polyimides and dry films. At a typical application temperatures around 75°C TechniStrip® P1316 may dissolve cross-linked resists without residue also, e.g. through dry etching or ion implantation. The remover can also be used in spraying processes.
Product Properties
Flashpoint: 93°C
Viscosity (20°C): < 2 cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.03 g/cm3
Compatibility
Metals: attacked Al, Cu, Au
Metals: no attack on Ta, Ni, Ti, TiN
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Some Applications
TechniStrip® P1316 is a powerful NMP-free remover for:
Novolak-based positive resists such as all positive AZ® resists
Epoxy-based resists
Polyimides, bonding glues
Dry films
Further Information
MSDS:
Safety Data Sheet TechniStrip P1316 (MOS) english
Sicherheitsdatenblatt TechniStrip P1316 (MOS) german
TDS:
Technical Data Sheet TechniStrip P1316 (MOS) english
Specs:
Specs TechniStrip P1316 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing