AZ 4562 Photoresist - 3.785 l
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AZ® 4562
Thick Resists with Optimized Adhesion
General Information
The AZ® 4500 series (AZ® 4533 and AZ® 4562) are positive thick resists with optimized adhesion for common wet etching and plating processes. The AZ® 4500 series follows the AZ® 1500 series in the attainable and processable resist film thickness range. AZ® 4533 (3.3 µm resist film thickness at 4000 rpm) and AZ® 4562 (6.2 µm) have a lower photoinitiator con¬centration compared to thin resists. This makes it possible to process thick resist films over 10 µm without N2 bubble formation, but at the expense of a significantly lower development rate. A resist film thicknes up to 30 µm can be achieved by single-coating with adjusted spin profiles (short spin times at medium spin speed). Higher layer thicknesses can be achieved by multiple coating. Higher film thickness attainable with multiple coating.
Please note: Resist Film Thicknesses > 30 µm Generally, the AZ® 4562 can be coated and processed up to 30 µm and beyond. However, softbake, rehydration, exposure and development become very time-consuming in this thickness range. Additionally, even the rather transparent AZ® 4562 photoresist may form N2-bubbles during exposure when applied too thick. Therefore, for resist film thicknesses > 20 µm, we strongly recommend the chemically amplified AZ® 40XT.
Product Properties
- Optimized resist adhesion to all common substrate materials
- Broad process parameter window for stable and reproducible litho-processes
- Compatible with all common developers (KOH- or TMAH-based)
- Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
- g-, h- and i-line sensitive (approx. 320 - 440 nm)
- Resist film thickness range approx. 5 - 30 µm
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 4562 Photoresist english
Sicherheitsdatenblatt AZ® 4562 Fotolack german
TDS:
Technical Data Sheet AZ® 4562 Photoresist english
Application Notes:
Further Information about Photoresist Processing
| Chemically amplified: | no |
|---|---|
| Film thickness: | 5.0 – 30.0 µm |
| Film thickness range: | thick (> 5.1µm) |
| High thermal stability: | no |
| Mode: | positive |
| Optimized for: | electroplating, wet etching |
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Developer
Remover
