AZ 40XT-11D Photoresist - 3.785 l
Merck Performance Materials GmbH
AZ® 40XT is an ultra thick chemically amplified positive resist for plating applications.
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Product number:
10040XT
Manufacturer:
Merck Performance Materials GmbH
Product information "AZ 40XT-11D Photoresist - 3.785 l"
AZ® 40XT
Chemically Amplified Thick Photoresist
General Information
AZ® 40XT is a chemically amplified, i-line sensitive ultra-thick photoresist for high aspect ratios.
Lines and spaces varying from 100 to 10 µm with a 40 µm thick AZ® 40XT at 400 mJ/cm2 exposure dose
Product Features
AZ® 40XT covers a resist film thickness range of approx. 15 - 50 µm. As a chemically amplified resist, the AZ® 40XT does not require rehydration between softbake and exposure, requires significantly lower exposure doses compared to non-chemically amplified resists of comparable thickness, does not release nitrogen during exposure (no bubble formation in the resist film during exposure), and has very high development rates for a thick resist. These properties help to make the entire process significantly faster and less prone to problems than with non-chemically amplified thick resists. Its good adhesion to all common substrate materials and its potential for steep resist sidewalls make it particularly suitable for galvanic molding for e.g. Cu, Ni or Au. In principle, the AZ® 40XT is only sensitive to i-line, but with correspondingly high exposure doses and resist film thicknesses, the h-line (405 nm) can also be used. It should be noted that with these chemically amplified photoresists, the post exposure bake is not optional but mandatory in order to complete the photo reaction induced during exposure and to enable subsequent development. If thinner photoresist layers than approx. 15 µm are desired, the AZ® 40XT can easily be diluted with PGMEA = AZ® EBR Solvent. If bubbles appear in the photoresist layer during the soft bake or post exposure bake, which can occur particularly with thicker photoresist layers, either a slow temperature ramp in these baking processes or a multi-stage baking process with increasing temperatures will help. If these measures are not an option, or if the formation of bubbles cannot be avoided despite this measure, we recommend using the ultra-thick photoresist AZ® IPS 6090, which is also chemically amplified.
Developers
TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF are recommended for developing this chemically amplified photoresist. KOH- or NaOH-based developers such as the AZ® 400K or AZ® 351B are less suitable for the AZ® 40XT.
Removers
If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Wall Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 40XT.anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 40XT Photoresist english
Safety Data Sheet AZ® 40XT Fotolack german
TDS:
Technical Data Sheet AZ® 40XT Photoresist english
Application Notes:
Further Information about Photoresist Processing
Related products
AZ 3DT-102M-15 - 3.785 l
13DT102153
AZ® 3DT-102M-15
Chemically Amplified Positive Photoresist
General Information
AZ® 3DT-102M-15 is a chemically amplified positive tone photoresist with a very high aspect ratio. It is intended for the use as a mask for dry etching, ion implantation, RDL and electroplating applications (Cu-compatible). It can be used with i-line steppers as well as with conventional mask aligners. The AZ® 3DT-102M-15 is intended for a thickness range of 8 - 20 µm.
Product Properties
Steep sidewalls
Compatible with-copper plating-processes
For TSV, implantation, RDL, electroplating, dry etching
Chemically amplified à PEB obligatory
Compatible with most photoresist stripper (e.g. AZ® 100 Remover, organic solvent based or alkaline)
i-line sensitive (can be used for broadband exposure as well)
Resist film thickness range ca. 8 - 20 µm
Developers
The recommended developers are AZ® 326 MIF or AZ® 726 MIF for the photoresist AZ® 3DT-102M-15.
Removers
The recommended strippers for the AZ® 3DT-102M-15 are AZ® 920 Remover, AZ® 100 Remover, TechniStrip P1316, TechniStrip P1331 and TechniStrip MLO07.
Thinning/ Edge Bead Removal
We recommend for thinning the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 3DT-102M-15 Photoresist english
Sicherheitsdatenblatt AZ® 3DT-102M-15 Fotolack german
TDS:
Technical Data Sheet AZ® 3DT-102M-15 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 10XT Photoresist (520cP) - 3.785 l
1A010XT00
Bottle size:
3.785 l
AZ® 10XT (520CPS)
Thick photoresist for high resolution
General Information
AZ® 10XT is an i- and h-line (not g- line !) sensitive positive thick photoresist, as the successor to the AZ® 9260 and is largely identical in construction, but with a different surfactant. In contrast to the similarly named AZ® 12XT, the AZ® 10XT is not chemically amplified.
3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)
Product Features
AZ® 10XT not only has optimized resist adhesion to common substrate materials, but also the potential for very steep resist sidewalls and high aspect ratios. Accordingly, the AZ® 10XT is often used in electroplating, ion implantation or dry etching/RIE. AZ® 10XT achieves a resist film thickness of approx. 6 µm at a spin speed of 4000 rpm; with an appropriately adjusted spin profile, the resist film thickness range of approx. 4.5 - 20 µm can be covered. If thinner resist layers are desired, the AZ® 10XT can be diluted with PGMEA; alternatively, the thinner AZ® 4533 can also be used for many applications. From a resist film thickness of approximately 10 - 15 µm, processing the AZ® 10XT becomes increasingly time-consuming: the soft bake and subsequent development take longer, more and more time is needed for rehydration between soft bake and exposure, and the risk of nitrogen bubbles forming during exposure increases. For resist film thicknesses greater than 10 µm, it is recommended to consider using a chemically amplified thick resist such as AZ® 12 XT (5 - 20 µm resist film thickness) or AZ®IPS 6090 (> 20 µm resist film thickness), which have significantly shorter soft bake and development times for the corresponding resist thickness, do not need rehydration, require significantly lower exposure doses, and do not release nitrogen during exposure.
Developers
For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, or the KOH-based AZ® 400K 1:4 (typically 1: 4 diluted with water, for faster development also slightly stronger with 1:3.5 or 1:3). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible, undiluted AZ® Developer.
Removers
If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. Acetone rinsed with Isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning / Edge Wall Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 10 XT anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 10XT (520cps) english
Safety Data Sheet AZ® 10XT (520cps) german
TDS:
Technical Data Sheet AZ® 10XT (520cps) english
Anwendungshinweis:
Further Information about Photoresist Processing
AZ 12XT-20PL-15 Photoresist - 3.785 l
1A012XT1500
AZ® 12XT-20PL-15
Chemically Amplified Positive Tone Photoresists
General Information
AZ® 12XT is a chemically amplified, i-line sensitive thick photoresist for high aspect ratios and with an increased thermal softening point.
AZ® 12XT - 2.4mm lines at 10mm film thickness
Product Features
AZ® 12XT covers a resist film thickness range of approx. 5 - 20 µm. As a chemically amplified resist, the AZ® 12XT does not require rehydration between softbake and exposure, requires significantly lower exposure doses compared to non-chemically amplified resists of comparable thickness, does not release nitrogen during exposure (no bubble formation in the resist film during exposure), and has very high development rates for a thick resist. These properties help to make the entire process significantly faster and less prone to problems than with non-chemically amplified thick resists. Its good adhesion to all common substrate materials and its potential for steep resist sidewalls make it suitable for galvanic molding, and its high thermal softening point (approx. 130 °C) also recommends it for dry etching or DRIE. Basically, the AZ® 12XT is only sensitive to i-line, but with correspondingly high exposure doses and resist film thicknesses, the h-line (405 nm) can also be used. If resist film thicknesses of less than approx. 5 µm are required, the AZ® 12XT can easily be diluted with PGMEA = AZ® EBR Solvent. For resist film thicknesses greater than 15 µm, the chemically amplified AZ® IPS 6090 should be considered.
Developers
TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF are recommended for developing this chemically amplified photoresist. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are less suitable for the AZ® 12 XT.
Removers
If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Bead Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 12 XT anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 12XT 20PL-15 english
Safety Data Sheet AZ® 12XT 20PL-15 german
TDS:
Technical Data Sheet AZ® 12XT 20PL-15 english
Application Notes:
Further Information about Photoresist Processing
AZ 4533 Photoresist - 3.785 l
1A004533
Bottle size:
3.785 l
AZ® 4533
Thick Resists with Optimized Adhesion
General Information
The AZ® 4500 series (AZ® 4533 and AZ® 4562) are positive thick resists with optimized adhesion for common wet etching and plating processes. The AZ® 4500 series follows the AZ® 1500 series in the attainable and processable resist film thickness range. AZ® 4533 (3.3 µm resist film thickness at 4000 rpm) and AZ® 4562 (6.2 µm) have a lower photoinitiator con¬centration compared to thin resists. This makes it possible to process thick resist films over 10 µm without N2 bubble formation, but at the expense of a significantly lower development rate.
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 2.5 - 5 µm
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Further Information
MSDS:
Safety Data Sheet AZ® 4533 Photoresist english
Sicherheitsdatenblatt AZ® 4533 Fotolack german
TDS:
Technical Data Sheet AZ® 4533 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 4562 Photoresist - 3.785 l
1A004562
Bottle size:
3.785 l
AZ® 4562
Thick Resists with Optimized Adhesion
General Information
The AZ® 4500 series (AZ® 4533 and AZ® 4562) are positive thick resists with optimized adhesion for common wet etching and plating processes. The AZ® 4500 series follows the AZ® 1500 series in the attainable and processable resist film thickness range. AZ® 4533 (3.3 µm resist film thickness at 4000 rpm) and AZ® 4562 (6.2 µm) have a lower photoinitiator con¬centration compared to thin resists. This makes it possible to process thick resist films over 10 µm without N2 bubble formation, but at the expense of a significantly lower development rate.
A resist film thicknes up to 30 µm can be achieved by single-coating with adjusted spin profiles (short spin times at medium spin speed). Higher layer thicknesses can be achieved by multiple coating. Higher film thickness attainable with multiple coating.
Please note: Resist Film Thicknesses > 30 µm
Generally, the AZ® 4562 can be coated and processed up to 30 µm and beyond. However, softbake, rehydration, exposure and development become very time-consuming in this thickness range. Additionally, even the rather transparent AZ® 4562 photoresist may form N2-bubbles during exposure when applied too thick. Therefore, for resist film thicknesses > 20 µm, we strongly recommend the chemically amplified AZ® 40XT.
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 5 - 30 µm
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 4562 Photoresist english
Sicherheitsdatenblatt AZ® 4562 Fotolack german
TDS:
Technical Data Sheet AZ® 4562 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ IPS-6090 Photoresist - 3.785 l
1006090
Bottle size:
3.785 l
AZ® IPS-6090
Positive Thick Resist
General Information
AZ® IPS-6090 for 30 - 150 µm Resist Film Thickness (i-line)
The chemically amplified AZ® IPS-6090 is, comparable to the AZ® 40XT, an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. It does not require rehydration, requires low light doses, releases no nitrogen during exposure, and develops very rapidly, thus permitting significantly shorter process times compared to standard thick resist films. However, the AZ® IPS-6090 necessarily requires a post exposure bake to be developed. It has been developed for use as patterning in semiconductors advanced packaging application (3DIC/TSV, CU Pillar, WLCSP, MEMS).
IPS 6050 (80 µm resist film thickness)
Product Properties
Very high resolution
High aspect ratio
Low exposure dose for the thickness of the film
Straight pattern profile and footing free
i-line sensitive, 330 – 390 nm
Film thickness range: 30 - 150 µm
Suited for applications such as electro chemical deposition / plating of Cu RDL in WLCSP process
Electro chemical deposition / plating of Cu, Ni, Sn, SnAg, Au for 3DIC, FO and Flipchip processing
Sacrificial layer for Si etching process in TSV
Sacrificial layer for SiO2 or SiN etching process in CMOS sensor processing
Developers
We recommend AZ® 326 MIF Developer or AZ® 726 MIF Developer (this one contains surfactants) for the photoresist AZ® IPS-6090.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover or the TechniStrip P1331.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® IPS-6090 Photoresist english
Sicherheitsdatenblatt AZ® IPS-6090 Fotolack german
TDS:
Technical Data Sheet AZ® IPS-6090 english
Information AZ® IPS-6090 english
Application Notes:
Further Information about Photoresist Processing
AZ P4110 Photoresist - 3.785 l
1A0P4110
AZ® P4110
Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620
General Information
The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics:
An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers.
Product Properties
Resist film thickness: 0.9 - 1.3 µm
Steep wall profiles, high aspect ratios
Sensitive to g-, h-, and i-line
Recommended developers: KOH-based (e.g. AZ® 400K) or TMAH-based (e.g. AZ® 2026 MIF)
Standard strippers (e.g. AZ® 100 Remover, TechniStrip P1316)
Thinner and edge bead remover: AZ® EBR Solvent or PGMEA
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® P4110 Photoresist english
Sicherheitsdatenblatt AZ® P4110 Fotolack german
TDS:
Technical Data Sheet AZ® P4000 Series english
Information AZ® P400 Series english
Application Notes:
Further Information about Photoresist Processing
AZ P4620 Photoresist - 3.785 l
1A0P4620
Bottle size:
3.785 l
AZ® P4620
Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620
General Information
The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics:
An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers.
AZ® P4620 (15µm holes at 24µm film thickness for Au plating)
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 5 - 30 µm
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR 70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® P4620 Photoresist english
Sicherheitsdatenblatt AZ® P4620 Fotolack german
TDS:
Technical Data Sheet AZ® P4620 Photoresist english
Technical Data Sheet AZ® P4000 Series english
Information AZ® P400 Series english
Application Notes:
Further Information about Photoresist Processing
AZ P4903 Photoresist - 3.785 l
1A0P4903
AZ® P4903
Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620
General Information
The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics:
An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers.
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 10 - 35 µm
Developers
If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® P4903 Photoresist english
Sicherheitsdatenblatt AZ® P4903 Fotolack german
TDS:
Technical Data Sheet AZ® P4000 Series english
Information AZ® P400 Series english
Application Notes:
Further Information about Photoresist Processing
Developer
AZ 326 MIF Developer - 5.00 l
1000326
AZ® 326 MIF Developer
Metal Ion-free Developer
General Information
AZ® 326 MIF is a TMAH-based developer for dip or spray development, compatible with all AZ®</sup photoresists from our portfolio.
Product Features
The ready-to-use AZ® 326 MIF developer is an aqueous 2.38% TMAH solution without any additives. This makes it suitable for dip or spray development, but less for puddle development, for which the AZ® 726 MIF developer is the better choice due to its special surfactant for substrate wetting. TMAH-based developers are always used when development must be carried out metal ion free. In addition, TMAH- based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute the AZ® 326 MIF with water (AZ® 326 MIF : water = 2:1 to a maximum of 1:1). AZ® 326 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer is an alternative, which, however, is based on sodium compounds and is therefore not metal ion-free.
For standard (non chemically amplified), DNQ-based positive resists without the requirement of metal ion-free development, a KOH- or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For cross-linking negative resists, AZ® 2026 MIF can prove advantageous, which promotes residue-free development with these resists through certain additives.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 326 MIF Developer english
Safety Data Sheet AZ® 326 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 326 MIF Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 726 MIF Developer - 5.00 l
1000726
AZ® 726 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 726MIF Developer english
Sicherheitsdatenblatt AZ® 726MIF Entwickler german
TDS:
Technical Data Sheet AZ® 726MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 2026 MIF Developer - 5.00 l
1002026
AZ® 2026 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 2026 MIF Developer english
Sicherheitsdatenblatt AZ® 2026 MIF Developer deutsch
TDS:
Technical Data Sheet AZ® 2026 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack deutsch
Remover
DMSO - 2.50 l - ULSI
MDMU1025
DMSO
Dimethyl Sulfoxide
General Information
Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO.
NOTE:
The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Product Properties
Density: 1.1 g/cm3
Melting point: 18°C
Boiling point: 189°C
Flash point: 87°C
Vapour pressure @ 20°C: 0.56 hPa
DMSO Molecule
Further Information
MSDS:
Safety Data Sheet DMSO (ULSI) english
Sicherheitsdatenblatt DMSO (ULSI) german
Specs:
Specs DMSO (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
AZ Remover 920 - 5.00 l
1000920
AZ® Remover 920
Organic Solvent Based Remover
General Information
AZ® Remover 920 is designed for fast delamination and dissolution of photoresist patterns while maintaining broad compatibility with device substrates and metal films.
Merck’s proprietary solvent and additive blend is environmentally friendly and fully compliant with the European Union’s REACH regulatory code. Compatible with most AZ® positive resists (complete dissolution) and most AZ® negative resists (dissolution or delamination depending on degree of cross-linking).
Product Properties
Flashpoint: 84.4°C
Viscosity (20°C): 1.84 cSt
Boiling point: 188°C
Density (at 25°C): 1.084 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ti, W, TiW, TiN, Sn, Ni
Substrates: Si, SiO2, GaAs
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Fast delamination of photoresist patterns
Broad compatibility
Environmentally friendly
Some Applications
Bulk Photoresist Removal
Metal Lift-off Lithography
Cu Pillar Metallization Cleans
RDL Metallization Cleans
Delamination of Heavily Cured Photoresist Patterns & Organic Residues
Further Information
MSDS:
Safety Data Sheet AZ® Remover 920 english
Sicherheitsdatenblatt AZ® Remover 920 german
TDS:
Technical Data Sheet AZ® Remover 920 english
Application Notes:
Photoresist Removal english
Entfernen von Fotolack german
TechniStrip MLO-07 - 5.00 l - MOS
TPMLO075
TechniStrip® MLO07
DMSO-based Stripper
General Information
TechniStrip® MLO 07 is a highly efficient positive and negative tone photoresist remover used for IR, III/V, MEMS, Photonic, TSV mask, solder bumping and hard disk stripping applications. TechniStrip® MLO 07 is developed to address high dissolution performance and high material compatibility on Cu, Al, Sn/Ag, Alu¬mina and common organic substrates.
Product Properties
Flashpoint: 94°C
Water Solubility: Fully miscible
Boiling point: 189°C
Density (at 20°C): 1.093 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Au, Ag, Sn
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Improved performance over NMP in many applications
Provides dissolution for many positive resists
High material compatibility on Cu, Al, Sn, Ag, alumina, magnetic alloys and organic substrates
Ideally suited for gold and aluminum metal lift-off
Formulated to minimize the formation of metal fragments during the lift-off process
Some Applications
Metal Lift-Off Process
Further Information
MSDS:
Safety Data Sheet TechniStrip MLO-07 (MOS) english
Sicherheitsdatenblatt TechniStrip MLO-07 (MOS) german
TDS:
Technical Data Sheet TechniStrip MLO-07 (MOS) english
Specs:
Specs TechniStrip MLO-07 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing