AZ 326 MIF Developer - 5.00 l

Merck Performance Materials GmbH

AZ® 326 MIF Developer is a developer formulation with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.

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Product number: 1000326

Manufacturer: Merck Performance Materials GmbH

Product information "AZ 326 MIF Developer - 5.00 l"

AZ^® 326 MIF Developer

Metal Ion-free Developer

General Information

AZ^® 326 MIF is a TMAH-based developer for dip or spray development, compatible with all AZ^{®</sup photoresists from our portfolio.}

Product Features

The ready-to-use AZ^® 326 MIF developer is an aqueous 2.38% TMAH solution without any additives. This makes it suitable for dip or spray development, but less for puddle development, for which the AZ^® 726 MIF developer is the better choice due to its special surfactant for substrate wetting. TMAH-based developers are always used when development must be carried out metal ion free. In addition, TMAH- based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute the AZ^® 326 MIF with water (AZ^® 326 MIF : water = 2:1 to a maximum of 1:1). AZ^® 326 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible AZ^® Developer is an alternative, which, however, is based on sodium compounds and is therefore not metal ion-free.
For standard (non chemically amplified), DNQ-based positive resists without the requirement of metal ion-free development, a KOH- or NaOH-based developer such as AZ^® 400K or AZ^® 351B can be considered instead of a TMAH-based developer for cost reasons. For cross-linking negative resists, AZ^® 2026 MIF can prove advantageous, which promotes residue-free development with these resists through certain additives.

Further Information

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MSDS:
Safety Data Sheet AZ^® 326 MIF Developer english
Safety Data Sheet AZ^® 326 MIF Entwickler german

TDS:
Technical Data Sheet AZ^® 326 MIF Developer english

Application Notes:
Development of Photoresist english
Development of Photoresist german

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