Merck Performance Materials GmbH

AZ 1518 Photoresist - 3.785 l

AZ® 1518 is a thin positive resist with high resolution potential for wet etching.
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Product number: 1A001518
Manufacturer: Merck Performance Materials GmbH
Product information "AZ 1518 Photoresist - 3.785 l"

AZ® 1518

Positive Thin Resists for Wet Etching

 

General Information

The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The elevated resist film thickness of the AZ® 1518 improve the stability of the resist mask for wet etching processes. At 4000 rpm, a coating thickness of approx. 1.8 µm can be attained. A coating thickness of approx. 1.5 – 3.0 µm can also be achieved by varying the spin speed.

Product Properties
  • Improved resist adhesion to all common substrate materials
  • Broad process parameter window for stable and reproducible litho-processes
  • High development rate
  • Compatible with all common developers (NaOH-, KOH- or TMAH-based)
  • Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
  • g-, h- and i-line sensitive (approx. 320 - 440 nm)
  • Resist film thickness range approx. 1.5 µm – 3.0 µm
Developers

If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.

Removers

For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.

Thinning/ Edge Bead Removal

We recommend for thinning and edge bead removal the AZ® EBR Solvent.

Further Information

MSDS:
Safety Data Sheet AZ® 1518 Photoresist english
Sicherheitsdatenblatt AZ® 1518 Fotolack german

TDS:
Technical Data Sheet AZ® 1518 Photoresist english

Application Notes:
Further Information about Photoresist Processing

Chemically amplified: no
Film thickness: 1.5 – 3.0 µm
Film thickness range: medium (1.6 - 5.0µm)
High thermal stability: no
Mode: positive
Optimized for: wet etching