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AZ 1512 HS Photoresist - 1.00 l

AZ® 1512HS is a thin positive resist with high resolution potential for wet etching.

Product information "AZ 1512 HS Photoresist - 1.00 l"

AZ® 1512 HS

Positive Thin Resists for Wet Etching

 

General Information

The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The very high photo active compound concentration of the AZ® 1512 HS maximises the resist contrast (very high development rate, minimized dark erosion). At 4000 rpm, a coating thickness of approx. 1.2 µm can be attained. A coating thickness of approx. 1.0 – 1.8 µm can also be achieved by varying the spin speed.

Product Properties
  • Improved resist adhesion to all common substrate materials
  • Broad process parameter window for stable and reproducible litho-processes
  • High development rate
  • Compatible with all common developers (NaOH-, KOH- or TMAH-based)
  • Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
  • g-, h- and i-line sensitive (approx. 320 - 440 nm)
  • Resist film thickness range approx. 1.0 – 1.8 µm
Developers

If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF** developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.

Removers

For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.

Thinning/ Edge Bead Removal

We recommend for thinning and edge bead removal the AZ® EBR Solvent.

Further Information

MSDS:
Safety Data Sheet AZ® 1512 HS Photoresist english
Sicherheitsdatenblatt AZ® 1512 HS Fotolack german

TDS:
Technical Data Sheet AZ® 1512 HS Photoresist english

Application Notes:
Further Information about Photoresist Processing

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Developer

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Remover

AZ 100 Remover - 5.00 l
1000100
AZ® 100 Remover Universal Photoresist Stripper   General Information AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine. Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water. AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists. Product Properties Density (at 25°C): 0.955 kg/l Color (Alpha): max. 20 Flashpoint (AP): 72°C Normality (potentiometric): 3.1 mol/l Boiling range: 159-194°C Further Information MSDS: Safety Data Sheet AZ® 100 Remover english Sicherheitsdatenblatt AZ® 100 Remover german TDS: Technical Data Sheet AZ® 100 Remover english Application Notes: Photoresist removal english Fotolack entfernen german
DMSO - 2.50 l - ULSI
MDMU1025
DMSO Dimethyl Sulfoxide   General Information Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO. NOTE: The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is. For more details please download the info letter. Product Properties Density: 1.1 g/cm3 Melting point: 18°C Boiling point: 189°C Flash point: 87°C Vapour pressure @ 20°C: 0.56 hPa   DMSO Molecule Further Information MSDS: Safety Data Sheet DMSO (ULSI) english Sicherheitsdatenblatt DMSO (ULSI) german Specs: Specs DMSO (ULSI) Application Notes: Solvents: Theory and Application english Lösemittel: Theorie und Anwendung german Photoresist Removal english Fotolack entfernen german Further Information about Processing
TechniStrip P1316 - 5.00 l - MOS
TP1316M5
TechniStrip® P1316 High Performance Remover   General Information TechniStrip® P1316 is a remover with very strong stripping power for Novolak-based resists (including all AZ® positive resists), epoxy-based coatings, polyimides and dry films. At a typical application temperatures around 75°C TechniStrip® P1316 may dissolve cross-linked resists without residue also, e.g. through dry etching or ion implantation. The remover can also be used in spraying processes. Product Properties Flashpoint: 93°C Viscosity (20°C): < 2 cP Water Solubility: Totally miscible Boiling point: 189°C Density (at 20°C): 1.03 g/cm3 Compatibility Metals: attacked Al, Cu, Au Metals: no attack on Ta, Ni, Ti, TiN Substrates: Si, SiO2 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Some Applications TechniStrip® P1316 is a powerful NMP-free remover for: Novolak-based positive resists such as all positive AZ® resists Epoxy-based resists Polyimides, bonding glues Dry films Further Information MSDS: Safety Data Sheet TechniStrip P1316 (MOS) english Sicherheitsdatenblatt TechniStrip P1316 (MOS) german TDS: Technical Data Sheet TechniStrip P1316 (MOS) english Specs: Specs TechniStrip P1316 (MOS) Application Notes: Photoresist Removal english Fotolack entfernen german Further Information about Processing
AZ Remover 920 - 5.00 l
1000920
AZ® Remover 920 Organic Solvent Based Remover   General Information AZ® Remover 920 is designed for fast delamination and dissolution of photoresist patterns while maintaining broad compatibility with device substrates and metal films. Merck’s proprietary solvent and additive blend is environmentally friendly and fully compliant with the European Union’s REACH regulatory code. Compatible with most AZ® positive resists (complete dissolution) and most AZ® negative resists (dissolution or delamination depending on degree of cross-linking). Product Properties Flashpoint: 84.4°C Viscosity (20°C): 1.84 cSt Boiling point: 188°C Density (at 25°C): 1.084 g/cm3 Compatibility Metals: no attack on Al, Cu, Ti, W, TiW, TiN, Sn, Ni Substrates: Si, SiO2, GaAs Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Main Features Fast delamination of photoresist patterns Broad compatibility Environmentally friendly Some Applications Bulk Photoresist Removal Metal Lift-off Lithography Cu Pillar Metallization Cleans RDL Metallization Cleans Delamination of Heavily Cured Photoresist Patterns & Organic Residues Further Information MSDS: Safety Data Sheet AZ® Remover 920 english Sicherheitsdatenblatt AZ® Remover 920 german TDS: Technical Data Sheet AZ® Remover 920 english Application Notes: Photoresist Removal english Entfernen von Fotolack german