AX 100 - 5.00 l
NB Technologies GmbH
AX 100 is an acidic solution for activating and pretreating seed layers and metallic surfaces for electroplating.
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Product number:
nbtax1005
Manufacturer:
NB Technologies GmbH
Product information "AX 100 - 5.00 l"
AX 100
Activator
General Information
AX 100 is an acidic solution for activating and pretreating seed layers and metallic surfaces for electroplating, on which a direct metallization may cause problems regarding the adhesive strength. This applies e.g. for the electroplating of Au on Ni surfaces or direct electroplating on Ti or TiW layers.
AX 100 activates metallic surfaces before electroplating and allows a better adhesive strength of electroplated layers on metallic surfaces, which tend to oxidation.
Common fields of application are semiconductor fabrication and microsystem technology.
Product Properties
- Low or none etch attack on metallic surfaces
- Compatible to many materials, e.g. common metals used in electroplating industry
- Compatible to resist masking
- Not poisonous substance and easy to handle
- Moderate operation temperature of about 40°C
Selectivity
AX 100 is compatible/etches selective to following materials:
- Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
- Metals: no attack on Ni, Ti, TiW, Ta, Cu
- Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet AX 100 english
Sicherheitsdatenblatt AX 100 german
TDS:
Technical Data Sheet AX 100 english
Application Notes:
Further Information about Processing
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General Information
Cr etch 210 is an alkaline etchant for Cr. The etchant is used for the wet-chemical patterning or removal of thin Cr layers with selectivity to metals like Au, Sn, Pt, Cu, Ni, Ti, Ta. Common areas of use are for semiconductor fabrication or microsystem technology, e.g. for the removal or patterning of a Cr barrier or adhesion layer in a plating seed stack.
Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Available in different purity grades
Compatible to resist mask
Use at room temperature
Increase of the etching rate by increased temperature up to 40°C
Selectivity
Cr etch 210 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Au, Sn, Pt, Cu, Ni, Ti, Ta
Metals: attacked Cr
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 10 to 15nm/min at 40 °C (accordingly lower at room temperature). A sputtered 30nm Cr layer is etched in about 180 seconds. The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Cr etch 210 english
Sicherheitsdatenblatt Cr etch 210 german
TDS:
Technical Data Sheet Cr etch 210 english
Technical Data Sheet Cr etch 210 german
Application Notes:
Wet Etching english
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Wet Etching of Metals english
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Further Information about Processing
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General Information
Au etch 200 is a non-hazardous, cyanide-free, slightly alkaline etchant for Au. The etchant is used for the wet-chemical patterning of Au layers with selectivity to metals like Pt, Ni, Cr, Ti, Al. Common areas of use for semiconductor fabrication or micro system technology.
Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1 µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Available in different purity grades
Compatible to resist masking
Not hazardous substance and easy to handle
Selectivity
Au etch 200 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Pt, Ni, Cr, Ti, Al, Ta
Metals: attacked Au, Cu
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 40 nm/min (at 50°C). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Au etch 200 english
Sicherheitsdatenblatt Au etch 200 german
TDS:
Technical Data Sheet Au etch 200 english
Technical Data Sheet Au etch 200 german
Application Notes:
Wet Etching english
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Wet Etching of Metals english
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Further Information about Processing
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Copper Etchant
General Information
Cu etch 100 is an alkaline etchant for Cu and is used for the wet-chemical removal of Cu layers with selectivity to metals like Ni, Au, Cr, Sn, Ti. Common areas of use are for semiconductor fabrication or microsystem technology.
Product Properties
High etching rate and rate of under etching with Cu as sacrificial layer
Selectivity to many materials, e.g. common metals used in electroplating industry
Available in different purity grades
Compatible to resist masking
Usage at room temperature
Selectivity
Cu etch 100 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Ni, Au, Cr, Sn, Ti, Pt, Ta
Metals: attacked Cu, TiW, Ag, Zn
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 3 to 3.5µm/min (at RT). The mixed etching solution is not stable over time (mixture of two components), but can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Cu etch 100 english
Sicherheitsdatenblatt Cu etch 100 german
TDS:
Technical Data Sheet Cu etch 100 english
Technical Data Sheet Cu etch 100 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
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Further Information about Processing
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Copper Etchant
General Information
Cu etch 150 is an alkaline etchant for Cu and is used for the wet-chemical removal of Cu layers with selectivity to metals like Ni, Au, Cr, Sn, Ti. Common areas of use are for semiconductor fabrication or microsystem technology.
Product Properties
Selectivity to many materials, e.g. common metals used in electroplating industry
Available in different purity grades
Compatible to resist masking
Usage at room temperature
Selectivity
Cu etch 150 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Ni, Au, Cr, Sn, Ti, Pt, Ta
Metals: attacked Cu, TiW, Ag, Zn
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 100 to 150nm/min (at RT). The mixed etching solution is not stable over time (mixture of two components), but can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Cu etch 150 english
Sicherheitsdatenblatt Cu etch 150 german
TDS:
Technical Data Sheet Cu etch 150 english
Technical Data Sheet Cu etch 150 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
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Further Information about Processing
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General Information
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Product Properties
Selectivity to many materials, e.g. common metals used in electroplating industry
Very small dimension lost
Available in different purity grades
Compatible to resist masking
Usage at room temperature
Selectivity
Cu etch 200 UBM is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Ni, Au, Cr, Sn, Ti, Al, Pt
Metals: attack on Cu, Ag
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 200 to 250nm/min (at RT). The etching solution stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Cu etch 200 english
Sicherheitsdatenblatt Cu etch 200 german
TDS:
Technical Data Sheet Cu etch 200 english
Technical Data Sheet Cu etch 200 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
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General Information
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Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Compatible to resist masking
Selectivity
TiW etch 100 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Au, Pt, Ni, Cr, Sn
Metals: attack on TiW, Cu
Cu impact at prolonged exposition
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 1nm/sec (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet TiW etch 100 english
Sicherheitsdatenblatt TiW etch 100 german
TDS:
Technical Data Sheet TiW etch 100 english
Technisches Datenblatt TiW etch 100 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
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Titan-Wolfram Etchant
General Information
TiW etch 200 is applied as etchant for titanium-for the wet-chemical patterning of TiW layers with selectivity to metals like Au, Pt, Ni, Cr. Usual applications are found in the semiconductor or microsystem technology field for etching adhesion layers or diffusion barriers.
Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Compatible to resist masking
Selectivity
TiW etch 200 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Au, Pt, Ni, Cr
Metals: attacked TiW, Cu
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 5nm/min (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet TiW etch 200 EN
Sicherheitsdatenblatt TiW etch 200 DE
TDS:
Technical Data Sheet TiW etch 200 EN
Technisches Datenblatt TiW etch 200 DE
Application Notes:
Wet Etching
Nasschemisches Ätzen
Wet Etching of Metals
Nasschemisches Ätzen von Metallen
Further Information about Processing