Zu "WWD40525250P1314SXX1" wurden 4 Produkte gefunden
Si + wet SiO2 wafer 4 inch 525 um (100) SSP P-doped
Ab
24,00 €*
WWD40525250P1314SXX1
Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 1000 nm SiO2
Lagerbestand:
199
Ab
24,00 €*
Si + wet SiO2 wafer 4 inch 525 um (100) DSP P-doped
Ab
59,00 €*
WWA40525250P1314SXX1
Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 5000 nm SiO2
Lagerbestand:
29
Ab
59,00 €*
Si + wet SiO2 wafer 4 inch 525 µm (100), SSP,B-doped
Ab
18,00 €*
WWD40525250B1314SXX1
Prime Si + SiO2 (dry/wet/dry)-Wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm SiO2
Lagerbestand:
497
Ab
18,00 €*
Si + wet SiO2 wafer 4 inch 525 um (111) SSP P-doped
Ab
22,00 €*
WWF40525250P1314SXX1
Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (111), 1-side polished, n-type (Phosphor) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm SiO2
Lagerbestand:
1
Ab
22,00 €*