Zu "WTD40525255B1011S091" wurde 1 Produkt gefunden
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
19,50 €*
WTD40525255B1011S091
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 5 µm, 0.001 - 0.01 Ohm cm, 90 nm SiO2
Lagerbestand:
115
Ab
19,50 €*