Zu "WTD40525250B1314S201" wurden 2 Produkte gefunden
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
17,00 €*
WTD40525250B1314S201
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 200 nm SiO2
Lagerbestand:
266
Ab
17,00 €*
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
19,00 €*
WTD40525250B1314S102
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2
Lagerbestand:
110
Ab
19,00 €*