Zu "WTD40525250B1050S281" wurden 2 Produkte gefunden
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
21,00 €*
WTD40525250B1050S281
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999)
Lagerbestand:
120
Ab
21,00 €*
Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Ab
20,00 €*
WTD40525250B1050S091
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 90 nm SiO2 +/- 20 %, laser marking on polished side (MCPHD002-XXX, XXX = 001-999)
Lagerbestand:
52
Ab
20,00 €*