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Si + Si3N4 wafer 4 inch 325 um (100) SSP B-doped
Ab
39,00 €*
WND40325250B1314S081
Prime Si + Si3N4 wafer 4 inch, thickness = 325 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 80 nm stoichiometric LPCVD Si3N4 on both sides
Lagerbestand:
75
Ab
39,00 €*