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Zu "WNA40525255B1314S041" wurden 2 Produkte gefunden

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Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
WNA40525255B1314S041
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 40 nm low-stress Si3N4
Lagerbestand: 6

Ab 43,00 €*

Ab 43,00 €*
Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
WNA40525255B1314S301
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 300 nm LPCVD Si3N4 on both sides
Lagerbestand: 53

Ab 39,00 €*

Ab 39,00 €*