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Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
Ab
34,00 €*
WNA40525155B1314S102
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 100 nm low-stress LPCVD Si3N4 on both sides
Lagerbestand:
119
Ab
34,00 €*