Zu "WNA40380155B1314S401" wurden 4 Produkte gefunden
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
Ab
44,00 €*
WNA40380155B1314S401
Prime Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 400 nm LPCVD low-stress Si3N4 on both sides
Lagerbestand:
18
Ab
44,00 €*
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
Ab
44,50 €*
WNA40380155B1314S071
Prime Si + LPCVD Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 75 nm Si3N4
Lagerbestand:
46
Ab
44,50 €*
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
Ab
37,00 €*
WNA40380155B1314S151
Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 145 nm LPCVD Si3N4 on both sides
Lagerbestand:
44
Ab
37,00 €*
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
Ab
68,00 €*
WNA40380155B1314SXX1
Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm LPCVD low-stress Si3N4 on both sides
Lagerbestand:
50
Ab
68,00 €*