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Si + Si3N4 wafer 4 inch 200 um (100) DSP B-doped
Ab
50,00 €*
WNA40200105B1314S202
Prime Si + Si3N4 wafer 4 inch, thickness = 200 ± 10 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 200 nm low-stress LPCVD Si3N4 on both sides
Lagerbestand:
2
Ab
50,00 €*