Zu "W9TD10010005250200B2" wurde 1 Produkt gefunden
Si + dry SiO2 wafer 100x100 mm 525 um (100) SSP
Ab
21,00 €*
W9TD10010005250200B2
Prime Square Si + dry SiO2 wafer piece (100 x 100 mm), thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 200 nm dry SiO2 (thermally grown on both sides), units of 10 wafers
Lagerbestand:
14
Ab
21,00 €*