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Fused silica JGS1 wafer 4 inch 1000 um DSP

Fused Silica wafer 1000 µm

Produktinformationen "Fused silica JGS1 wafer 4 inch 1000 um DSP"

Fused silica JGS1 wafer 4 inch +/- 0.3 mm, thickness = 1000 ± 25 µm, 2-side polished, TTV < 10 µm, primary flat 32.50mm, Bow/Warp < 40 µm, S/D 40/20

Diameter (round): 4 inch
Material: Fused Silica
Surface: 2-side polished
Thickness: 701 - 1000 µm