Zum Hauptinhalt springen

CZ-Si wafer 4 inch 800 um (100) DSP B-doped

Prime CZ-Si wafer 800 µm 100

Produktinformationen "CZ-Si wafer 4 inch 800 um (100) DSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 800 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm