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CZ-Si wafer 4 inch 525 um (100) DSP B-doped

Prime CZ-Si wafer 525 µm 100

Produktinformationen "CZ-Si wafer 4 inch 525 um (100) DSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 525 ± 15 µm, (<100>+/-0.3°), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 2 SEMI standard Flats