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CZ-Si wafer 4 inch 4000 um (100) DSP B-doped

Prime CZ-Si wafer 4000 µm 100

Produktinformationen "CZ-Si wafer 4 inch 4000 um (100) DSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 4000 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 2 flats (SEMI standard), units of 25 wafers, wafers separated by paper sheet, not particle specified