Zum Hauptinhalt springen

CZ-Si wafer 4 inch 380 um (100) DSP B-doped

Prime CZ-Si wafer 380 µm 100

Produktinformationen "CZ-Si wafer 4 inch 380 um (100) DSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 20 - 100 Ohm cm, Bow < 20 µm, Warp < 25 µm