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CZ-Si wafer 2 inch 400 um (100) SSP P-doped

Prime CZ-Si wafer 400 µm 100

Produktinformationen "CZ-Si wafer 2 inch 400 um (100) SSP P-doped"

Prime CZ-Si wafer 2 inch, thickness = 400 ± 25 µm, (100), 1-side polished, n-type (Phosphor), TTV < 10 µm, 10 - 20 Ohm cm

Diameter (round): 2 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 10 - 100 Ohm cm
Surface: 1-side polished
Thickness: 301 - 400 µm