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CZ-Si wafer 2 inch 3000 um (100) SSP As-doped

Prime CZ-Si wafer 3000 µm 100

Produktinformationen "CZ-Si wafer 2 inch 3000 um (100) SSP As-doped"

Prime CZ-Si wafer 2 inch, thickness = 3000 ± 25 µm, (100) +/- 0.5°, 1-side polished, n-type (Arsen), 0.001 - 0.005 Ohm cm, TTV < 10 µm, Bow/Warp < 30 µm, 1 SEMI Flat

Diameter (round): 2 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 0 - 0.01 Ohm cm
Surface: 1-side polished
Thickness: > 2000 µm