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CZ-Si wafer 12 inch 775 um (100) DSP B-doped

Dummy CZ-Si wafer 775 µm 100

Produktinformationen "CZ-Si wafer 12 inch 775 um (100) DSP B-doped"

Dummy CZ-Si wafer 12 inch, thickness = 775 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 100 Ohm cm, SEMI notch, not particle specified, tiny scratches possible, units of 50 wafers/cakebox

Diameter (round): 12 inch
Material: CZ-Si
Orientation: 100
Quality: Dummy
Resistivity: 10 - 100 Ohm cm
Surface: 2-side polished
Thickness: 701 - 1000 µm