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CZ-Si wafer 1 inch 280 um (100) SSP As-doped

Prime CZ-Si wafer 280 µm 100

Produktinformationen "CZ-Si wafer 1 inch 280 um (100) SSP As-doped"

Prime CZ-Si wafer 1 inch, thickness = 280 ± 25 µm, (100), 1-side polished, TTV < 10 µm, 0.001 - 0.005 Ohm cm, no flat

Diameter (round): 1 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 0 - 0.01 Ohm cm
Surface: 1-side polished
Thickness: 201 - 300 µm