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CZ-Si wafer 1 inch 2500 um (100) SSP B-doped

Dummy CZ-Si wafer 2500 µm 100

Produktinformationen "CZ-Si wafer 1 inch 2500 um (100) SSP B-doped"

CZ-Si wafer 33 mm diameter, thickness = 2500 ± 50 µm, (100), 1-side polished (optical grade), p-type (Boron), 1 - 10 Ohm cm, no flat

Diameter (round): 1 inch
Material: CZ-Si
Orientation: 100
Quality: Dummy
Resistivity: 1 - 10 Ohm cm
Surface: 1-side polished
Thickness: > 2000 µm