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CZ-Si wafer 1 inch 200 um (100) DSP B-doped

Prime CZ-Si wafer 200 µm 100

Produktinformationen "CZ-Si wafer 1 inch 200 um (100) DSP B-doped"

Prime CZ-Si wafer 24.5 +/- 0.3 mm diameter, thickness = 200 ± 25 µm, (100), 2-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, !! no flat !!, units of 50 wafers stacked in cakeboxes

Diameter (round): 1 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 1 - 10 Ohm cm
Surface: 2-side polished
Thickness: 100 - 200 µm